technical data npn darlington pow er silicon transistor qualified per m il - prf - 1 9 5 0 0 / 5 2 3 devices qualified level 2n6383 2n6384 2n6385 jan, jantx jantxv maximum ratings ratings symbol 2n6383 2n6384 2n6385 unit collector - emitter voltage v ceo 40 60 80 vdc collector - base voltage v cbo 40 60 80 vdc emitter - base voltage v ebo 5.0 vdc base current i b 0.25 adc collector current i c 10 adc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 6.0 100 w w operating & storage temperature t op , t stg - 55 to +175 0 c thermal characteristics characteristics symbol max. unit thermal resistance junction - to - case r q jc 1.75 0 c/w 1) derate linearly 34.2 mw/ 0 c above t a > +25 0 c 2) derate linearly 571 mw/ 0 c above t c > +25 0 c to - 3* (to - 204aa) *see appendix a for package outline electrical characteristics (t c = +25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 200 madc 2n6383 2n6384 2n6385 v (br) ceo 40 60 80 vdc collector - emitter breakdown voltage i c = 200 madc, r bb = 100 w 2n6383 2n6384 2n6385 v (br) cer 40 60 80 vdc collector - base cutoff current v ce = 40 vdc 2n6383 v ce = 60 vdc 2n6384 v ce = 80 vdc 2n6385 i cbo 1.0 1.0 1.0 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 downloaded from: http:///
2n6383, 2n6384, 2n6385, jan series electrical characteristics (cont) characteristics symbol min. m ax. unit emitter - base cutoff current v eb = 5.0 vdc i ebo 5.0 madc collector - emitter cutoff current v ce = 40 vdc 2n6383 v ce = 60 vdc 2n6384 v ce = 80 vdc 2n6385 i ceo 1.0 1.0 1.0 madc collector - emitter cutoff current v ce = 40 vdc, v be = 1.5 vdc 2n6383 v ce = 60 vdc, v be = 1.5 vdc 2n6384 v ce = 80 vdc, v be = 1.5 vdc 2n6385 i cex 0.3 0.3 0.3 madc on characteristics (3) forward - current transfer ratio i c = 5.0 adc, v ce = 3.0 vdc i c = 10 adc, v ce = 3.0 vdc h fe 1,000 100 20,000 collector - emitter saturation voltage i c = 5.0 adc, i b = 10 madc i c = 10 adc, i b = 0.1 adc v ce(sat) 2.0 3.0 vdc base - emitter voltage i c = 5.0 adc, v ce = 3.0 vdc i c = 10 adc, v ce = 3.0 vdc v be(on) 2.8 4.5 vdc dynamic chara cteristics small - signal short - circuit forward current transfer ratio i c = 1.0 adc, v ce = 5.0 vdc, f = 1.0 mhz ? h fe ? 20 300 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 200 pf switching characteristics turn - on time v cc = 30 vdc; i c = 5.0 adc; i b1 = 20 madc t on 2.5 m s turn - off time v cc = 30 vdc; i c = 5.0 adc; i b1 = - i b2 = 20 madc t off 10 m s safe operating area dc tests t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = 10 vdc, i c = 10 adc all types test 2 v ce = 30 vdc, i c = 3.33 adc all types test 3 v ce = 40 vdc , i c = 1.5 adc 2n6383 v ce = 60 vdc, i c = 0.4 adc 2n6384 v ce = 80 vdc, i c = 0.16 adc 2n6385 (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2 downloaded from: http:///
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